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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB550
DESCRIPTION *With TO-66 package *Low collector saturation voltage APPLICATIONS *For low frequency power amplification *For low speed and power switching
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -70 -5 -5 25 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SB550
SYMBOL
TYP.
MAX
UNIT
V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
Collector-base breakdown voltage
IC=-1mA; IE=0 IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-10V
-100
V
Collector-emitter breakdown voltage
-70
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-1.0
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-0.1
mA
Emitter cut-off current
-0.1
mA
DC current gain
30
200
Transition frequency
5
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB550
Fig.2 outline dimensions
3


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